In-planeMagnetic Field DependentMagnetoresistance of GatedAsymmetricDouble QuantumWells
نویسنده
چکیده
We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al0.3Ga0.7As barrier into the GaAs buffer layer of a standard modulation-doped GaAs/Al0.3Ga0.7As heterostructure. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the thin barrier. With a proper choice of the barrier parameters one can control the occupancy of the two wells and of the two lowest (bonding and antibonding) subbands. The electron properties can be further influenced by applying frontor back-gate voltage.
منابع مشابه
Magnetoresistance oscillations in GaAs/AlGaAs superlattices subject to in-planemagnetic fields
The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D→2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to ...
متن کاملGaInN-based LED structures on selectively grown semi-polar crystal facets
In conventional nitride-based light emitting diodes, huge internal electric fields lead to a reduced overlap of electron and hole wave functions in the active GaInN quantumwells as a consequence of the piezoelectricity of these polar materials. In order to minimize these internal fields while still maintaining the well-established c-direction as main epitaxial growth direction for high-quality ...
متن کاملExciton condensation in quantum wells. Exciton hydrodynamics. The effect of localized states
The hydrodynamic equations for indirect excitons in the double quantumwells are studied taking into account 1) a possibility of an exciton condensed phase formation, 2) the presence of pumping, 3) finite value of the exciton lifetime, 4) exciton scattering by defects. The threshold pumping emergence of the periodical exciton density distribution is found. The role of localized and free exciton ...
متن کاملAlGaN/AlN multiple quantumwells grown by MOVPE on AlN templates using nitrogen as a carrier gas
AlxGa1 xN/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and materi...
متن کاملGate VoltageDependence of theMagnetotransport in Double QuantumWells
We have investigated the gate-dependent magnetoresistance of strongly asymmetric double-well structures. The structures were prepared by inserting a thin Al0.3Ga0.7As barrier into the GaAs buffer layer of standard modulation-doped GaAs/Al0.3Ga0.7As heterojunctions. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the th...
متن کامل